Prof. Takashi NOGUCHI, University of the Ryukyus, Japan

Biography: Takashi Noguchi received M.S. degree in 1979 and Ph.D. in 1992 from Doshisha University. In 1979, he joined Sony Corp., and contributed in R & D on Si MOS LSIs as well as Si TFTs (LTPS). In1994, he stayed in MIT as a visiting scientist. In 1998, he managed a research on novel Si devices in Sony Research Center. In 2001, he moved to France as a research scientist of CNRS in Universite Paris-Sud. In 2002, he moved to Korea and he managed two research projects as an executive member in SAIT, and also contributed in SungKyunKwan University. After 2006, he has contributed as a professor in University of the Ryukyus in Japan. After April 2019, he is a professor emeritus in Univ. of the Ryukyus.

Speech Title: Effective Laser Annealing for Semiconductor films

Effective Annealing of Si and the applications to Transistors are reviewed. So far, many kinds of power laser have been developed. The Laser Annealing (LA) technique for semiconductor layers or films using CW or pulsed mode scanning is effective such as for Thin Film Transistors (TFTs) formed by Low Temperature Poly Si (LTPS) process. Current LA process and the advantage of the devices are presented based on reported results. Furthermore, the issues and future possibility are also discussed.