ICCED 2023 Keynote Speakers

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ICCED 2022 Keynote Speakers

Prof. Wei Hong, IEEE Fellow, Southeast University, China

Speech Title: Millimeter Wave Integrated Circuit and Its Applications in Communication and Radar Systems

 

Abstract: In this talk, the recent advances in millimeter wave (mmWave) integrated circuit (mmWave ICs or Chips) and its applications in 5G and beyond communication systems and automotive radar systems in the State Key Laboratory of Millimeter Waves (SKLMMW) and cooperative enterprises are reviewed.

 

Biography: Wei Hong received the B.S. degree from the University of Information Engineering, Zhengzhou, China, in 1982, and the M.S. and PhD degrees from Southeast University, Nanjing, China, in 1985 and 1988, respectively, all in radio engineering.

Since 1988, he has been with the State Key Laboratory of Millimeter Waves (SKLMMW) and serves for the director of the lab during 2003-2021, and is currently a professor of the School of Information Science and Engineering, Southeast University. In 1993, 1995, 1996, 1997 and 1998, he was a short-term visiting scholar with the University of California at Berkeley and at Santa Cruz, respectively. He has been engaged in numerical methods for electromagnetic problems, millimeter wave theory and technology, antennas, RF technology for wireless communications etc. He has authored and co-authored over 300 technical publications and two books. He twice awarded the National Natural Prizes, four times awarded the first-class Science and Technology Progress Prizes issued by the Ministry of Education of China and Jiangsu Province Government etc. Besides, he also received the Foundations for China Distinguished Young Investigators and for “Innovation Group” issued by NSF of China.

Dr. Hong is a Fellow of IEEE, Fellow of CIE, the vice presidents of the CIE Microwave Society and Antenna Society, the Chair of the IEEE MTT-S/AP-S/EMC-S Joint Nanjing Chapter, and was an elected IEEE MTT-S AdCom Member during 2014-2016. He served as the Associate Editor of the IEEE Trans. on MTT from 2007 to 2010.

 

Prof. Amine Bermak, IEEE Fellow, Hamad Bin Khalifa University, Qatar

Speech Title: Wearable Electronics for next generation IoT Systems

 

Abstract: “Internet-of-things” refers to smart electronic systems that are able to sense, process and transmit useful information from the environment while being completely autonomous by harvesting readily available solar, thermal or kinetic ambient energy. Deployed in IoT applications, these smart devices are able to monitor water leakage in a water pipe, blood pressure in human body, temperature of frozen food items, but also humidity, air and water quality in intelligent buildings and smart cities. In order to do so, sensing will be a cornerstone pillar for future IoT systems.
This talk will present emerging printed electronic technologies that led to wearable electronics for IoT sensing. We will explore fabrication processes of these sensors as well as their integration in fully autonomous systems and finally deployment in key applications related to biomedical, sports and vital signs monitoring. The talk will cover state-of-the art technological developments in this area, and outline existing challenges as well as emerging new opportunities for research and innovation in this rapidly growing field. The conclusion of the talk will discuss the role that wearable electronics play in future generation IoT systems.

Biography: Prof. Amine Bermak received the Masters and PhD degrees, both in electrical and electronic engineering (microelectronics and Microsystems), from Paul Sabatier University, Toulouse, France in 1994 and 1998, respectively. During his PhD, he was part of the Microsystems and Microstructures Research Group at the French National Research Centre LAAS-CNRS, where he developed a 3D VLSI chip for artificial neural network classification and detection applications in a project funded by Motorola. While finalizing his PhD, he was offered a Post-doc position at the Advanced Computer Architecture group at York University – England, to work on VLSI implementation of CMM neural network for vision applications in a project funded by British Aerospace.

Prof. Bermak was nominated for the 2013 Hong Kong UGC best teacher award (for all HK Universities). He is the recipient of the 2011 University Michael G. Gale Medal for distinguished teaching (Highest University-wide Teaching Award). This gold medal is established to recognize excellence in teaching and only one recipient/year (out-of over 550 faculty) is honored for his/her contribution. Prof. Bermak is also a two-time recipient of the “Engineering School Teaching Excellence Award" in HKUST for 2004 and 2009, respectively.

Prof. Bermak has received many distinguished awards, including the 2016 DAC best design context award, the “Best paper award” at IEEE International Symposium on Circuits and systems ISCAS 2010; the 2004 “IEEE Chester Sall Award”; the IEEE Service Award from IEEE Computer Society and the “Best Paper Award” at the 2005 International Workshop on System-On-Chip for Real-Time Applications. He has published over 250 articles in journals, book chapters and conference proceedings and designed over 50 chips. He has supervised 25 PhD and 16 MPhil students. He has served on the editorial board of IEEE Transactions on Very Large Scale Integration (VLSI) Systems and IEEE Transactions on Circuits and Systems II. He is also currently serving on the editorial board of IEEE Transactions on Biomedical Circuits and Systems; IEEE Transactions on Electron Devices and Nature Scientific Reports. He is the guest editor of the November 2010 special issue in IEEE Transactions on Biomedical Circuits and Systems. Prof. Bermak is a Fellow of IEEE and IEEE distinguished Lecturer. He was the co-director of MIT-HKUST Consortium.

 

Prof. Takashi NOGUCHI, University of the Ryukyus, Japan

Speech Title: Effective Crystallization of Thin Si Films for the TFTs on Panel

Abstract: Currently, thin Si devices are important for AM (active matrix) FPDs. For the glass panel of large and medium size, hydrogenated amorphous (a-Si:H) Si TFT is used to drive LC or OLED. And, high performance poly-crystalline (poly Si) TFT is important for small panels such as smart-phone etc.. To produce the poly Si TFTs both for n-type and p-type of CMOS integration, effective crystallization techniques have been extensively studied so far, and widely adopted.
To realize high performance TFT with functional devices on panels, the attractive crystallization and devices are described. Also, the technical issues of crystallization techniques and the possibility in the future and are presented.

 

Biography: Takashi Noguchi received M.S. degree in 1979 and Ph.D. in 1992 from Doshisha University. In 1979, he joined Sony Corp., and contributed in R&D on Si MOS LSIs as well as Si TFTs (LTPS). In1994, he stayed in MIT as a visiting scientist. In 1998, he managed a research on novel Si devices in Sony Research Center. In 2001, he moved to France as a research scientist of CNRS in Universite Paris-Sud. In 2002, he moved to Korea and he managed two research projects as an executive member in SAIT, and also contributed in SungKyunKwan University. After 2006, he has contributed as a professor in University of the Ryukyus in Japan. After April 2019, he is a professor emeritus in Univ. of the Ryukyus.

 

Prof. Mehmet Ertugrul, Ataturk University, Turkey & University Putra Malaysia (UPM), Malaysia

Speech Title: Energy Efficenet Wires: Ultraconductors and Covetics

Abstract: Energy-saving and increasing the efficiency of power transmission lines, electrical machines and transformers are important as much as diversity and renewability of energy resources. Considering the increasing power need it would be impossible to transmit dozens of GW power using the existing transmission lines due to the current carrying limitation of the metals used in transmission lines. Hence, it is a must to develop new materials for power transmission lines. The studies on energy-efficient materials, which can be alternative to superconductors and normal conductors, especially for applications of daily life are continued due to these disadvantages. It is known that new generation electrical materials on which the studies have been heavily performed in recent years have demonstrated close or better performances than superconductors in certain aspects even though they are not superconductors. One potential approach for decreasing metals electrical resistivity is the incorporation of carbon nanotubes into metal. In present work, we developed a unique method to obtain metal-CNT composite to get ultraconductive wire.

 

Biography: Prof. Dr. Mehmet Ertugrul was born in Trabzon, Turkey, in 1966. He received the B.Sc. degree from the Department of Physics, in 1986, and the M.Sc. and Ph.D. degrees in physics, in 1990 and 1994, respectively. From 1994 to 1996, 1996 to 2001, and 2001—2002, he was, respectively, an Assistant Professor, an Associate Professor, and a Full Professor at the Department of Physics, Ataturk University, where he has been a Full Professor at the Department of Electrical and Electronics Engineering since 2003. He is the author or co-author of more than 250 papers published in international journals and over 200 publications in national and international conference proceedings.

 

Prof. FURUTA Mamoru, Kochi University of Technology, Japan

Speech Title: Metal oxide semiconductor thin-film transistor technologies for display applications

Transparent metal oxide semiconductors (OSs) have been extensively investigated for use as the active channel layer of thin film transistors (TFTs) for next-generation flat-panel displays (FPDs). Among OSs, the amorphous In–Ga–Zn–O (IGZO) has attracted particular attention for TFT applications owing to its high field effect mobility of more than 10 cm2V−1s−1, steep subthreshold swing (S.S.), extremely low off-state current, large-area uniformity, and good bias stress stability. Although the field effect mobility of an IGZO TFT is more than one order of magnitude higher than that of an amorphous Si TFT, further improvement of the mobility in OS TFTs is required to expand their range of applications. In this presentation, current status and future prospect in the oxide TFTs will be discussed for FPDs including Title:the flxible device application.

 

Biography: Mamoru Furuta is a Professor at Department of Environmental Science and Engineering of Kochi University of Technology, Japan. His current research interests are metal oxide semiconductors for TFTs and their application to imaging devices. In 1988-2004, he worked in the Central Research Laboratory of Panasonic, and Toshiba Matsushita Display Technology Co. , Ltd.. He had wide variety of job experiences in company not only the R & D but also a mass production including a start up of the polycrystalline silicon (LTPS) TFT factory in Singapore. Since 2005, he joined Kochi University of Technology, and has been working on the research of metal oxide semiconductors for TFT. In 2006, he demonstrated a pioneer ing work of the metal oxide TFT which was the worlds’ first LCD driven by ZnO TFT at the conference of the Society for Information Display (SID’06) which was held at San Francisco, USA. He received the Distinguished Paper Award from the SID in 2006, the Outstanding Poster Award from the International Display Workshop (IDW) in 2006, 2013 and 2016, and the Niwa-Takayanagi Paper Award from the Institute of Image Information and Television Engineers (ITE, Japan) in 2011. He is a member of editorial board of Applied Physics Express (APEX) and Japanese Journal of Applied Physics (JJAP), Japan Society of Applied Physics, and a senior member of the IEEE.