ICCED 2019 Keynote Speakers&Invited Speakers

Prof. Dr. Arokia Nathan, IEEE Fellow&IET Fellow, Cambridge University, UK


Arokia Nathan holds the Sumitomo/STS Chair of Nanotechnology at the London Centre for Nanotechnology, University College London. He is also the CTO of Ignis Innovation Inc., Waterloo, Canada, a company he founded to commercialize technology on thin film silicon backplanes on rigid and flexible substrates for large area electronics. He received his PhD in Electrical Engineering from the University of Alberta, Edmonton, Alberta, Canada, in 1988. In 1987, he joined LSI Logic Corp., Santa Clara, CA where he worked on advanced multi-chip packaging techniques and related issues. Subsequently, he was at the Institute of Quantum Electronics, ETH Zürich, Switzerland. In 1989, he joined the Department of Electrical and Computer Engineering, University of Waterloo. In 1995, he was a Visiting Professor at the Physical Electronics Laboratory, ETH Zürich. In 1997 he held the DALSA/NSERC Industrial Research Chair in sensor technology, and was a recipient of the 2001 Natural Sciences and Engineering Research Council E.W.R. Steacie Fellowship. In 2004 he was awarded the Canada Research Chair in nano-scale flexible circuits. In 2005/2006, he was a Visiting Professor in the Engineering Department, University of Cambridge, UK, and later in 2006, he joined the London Centre for Nanotechnology and is a recipient of the Royal Society Wolfson Research Merit Award . He has published extensively in the field of sensor technology and CAD, and thin film transistor electronics, and has over 40 patents filed/awarded. He is a co-author of two books, Microtransducer CAD and CCD Image Sensors in Deep-Ultraviolet, both published by Springer in 1999 and 2005, respectively, and serves on technical committees and editorial boards at various capacities. He is a Chartered Engineering (UK), Fellow of the Institution of Engineering and Technology (UK), Fellow of IEEE (USA), and an IEEE/EDS Distinguished Lecturer.

 

 

 

Prof. Jin Jang, Fellow of SID, Kyung Hee Univesity, Korea

 

Jin Jang is a Professor at Department of Information Display of Kyung Hee University. His current research programs are in oxide and LTPS TFTs for displays, TFT circuits and TFT application to sensors, QLED, Micro-LED and flexible AMOLED. He is the author or co-author of over 950 technical publications of which over 600 are in SCI Journals such as Nature, Advanced Materials, Advanced Functional Materials, Advanced Energy Materials, Energy Environmental Science, APL, IEEE TED and IEEE EDL. He is currently a Director of Advanced Display Research Center (ADRC), and had served as Program Chair of SID Symposium 2007 and General Chair of SID Display Week in 2009 and General Chair of IMID 2012, 2013. He is a Fellow of SID and he was awarded George Smith Award from IEEE in 2012, Slotto Owaki Prize from SID in 2015 and Ho-Am Award in 2017.

 

Speech Title: TFT Technologies for Display and Sensor

 

Abstract: There is of increasing interest for thin-film transistor (TFT) which can be a basic device for displays and sensors. A big advantage of TFT is that it can be manufactured on any substrate including flexible and stretchable ones. For example, the substrate for display changes from glass to polyimide, and the glass which was used for display manufacturing for many tens of years will change into plastic within in 10 years. I will discuss the display and sensor applications of TFTs and will presents the recent results we have developed for sensor and flexible displays. Finally, I will discuss the future prospect of TFT applications on plastic substrates.

 

 

Prof. Massimo Poncino, IEEE Fellow, Politecnico di Torino, Italy

Massimo Poncino is Full Professor of Computer Engineering at Politecnico di Torino. 
His research interests include the design automation of digital systems, with special emphasis on low-power embedded systems, modeling and the simulation of digital systems. 
He has coauthored more than 350 publications in the above areas.  Many of these publications are relative to the results of industry-oriented funded research projects, including collaborations with various companies from the ICT, semiconductor, and automotive domain. Since 1999, Massimo Poncino has been involved, as a technical manager or coordinator  of more than 30 of EC-funded projects.

Massimo Poncino has served as member of Technical Program Committee of many international IEEE and ACM conferences, and also served as a reviewer for a number of journal and conferences of the IEEE and ACM.  He was the Technical Program Chair of the 2011 IEEE/ACM Symposium on Low-Power Electronics and Design and General co-Chair for the 2012 IEEE/ACM Symposium on Low-Power Electronics and Design.  He has served in the Editorial Board of several international journals and is currently serving in the Editorial Board of IEEE Design & Test and ACM Transactions on Design Automation of Electronic Systems (TODAES).

Massimo Poncino is a Fellow of the IEEE, member of the ACM SIGDA Low-Power Technical Committee, and a Member the Circuit and Systems Society.

 

Speech Title: Holistic Power Management in Internet-of-Things Devices

Abstract: The main constraint of most personal consumer electronic devices is not computational power, but rather their energy consumption. The potentiality of these devices could be even pushed further, if it were not to the stringent constraints imposed by batteries.

In the last 20 years there has been a continuous effort in reducing the power demand of those devices: state-of-the-art components have reached impressive energy efficiency figures. However, focusing on how the available energy is consumed is only one part of the picture; Many consumer devices are battery-operated, and the way this inite amount of energy is extracted from the battery, distributed, and converted is an often overlooked issue.

In this talk we will show how focusing only one how the energy is consumed will severely underestimate the actual usability of consumer devices, and propose solutions for a smart management of energy by carefully analyzing also its storage, distribution, and conversion.

 

 

Prof. Byung Seong Bae, Hoseo University, Korea

Byung Seong Bae received the B.S. degree in atomic nuclear engineering from the Seoul National University, Seoul, Korea, in 1984 and the M.S. and Ph.D. degrees in applied physics from the Korea Advanced Institute of Science and Technology, Seoul, Korea in 1986, and 1991, respectively. Between 1991 and 1998, he worked at the Samsung Electronics on the development of amorphous and poly-silicon TFT LCD with integrated driver. From 1999 to 2003, he set up the high-temperature poly-silicon TFT LCD factory and developed micro-display for projection display at ILJIN Display. Since 2006, he is a Professor, School of Electronics and Display Engineering of the Hoseo University, Asan, Korea.

 

Speech Title: Water Level Sensor Integrated by Oxide TFT

Abstract: The water level sensor was developed with the capacitive type sensor. The oxide thin film transistor process was used for the full integration of the water level sensor on a substrate including all parts such as transistor, capacitor, wires and sensing electrode. The full integration by oxide thin film transistor can remove the mounting process of the parts and provide robust sensor assembly due to removal of the soldering. The output signal was increased when the tank was empty and decreased when the tank was filled by water. Since the thin film transistor process is possible on various material such as film, paper and metal foil, the extendibility to the flexible application is a big advantage. Some consumer electronics are using the water tank which needs the sensor to check the height of the water. The developed water level sensor by oxide thin-film transistor is useful for those applications. The integrated sensor system showed higher output voltage than the sensor by the MOSFET. The higher output voltage for the oxide thin film transistor sensor was attributed to the smaller parasitic capacitance of the thin film transistor than MOSFET device.

 

 

 

Prof. Mamoru Furuta, Kochi University of Technology, Japan

Mamoru Furuta is a Professor at Department of Environmental Science and Engineering of Kochi University of Technology, Japan. His current research interests are metal oxide semiconductors for TFTs and their application to imaging devices. In 1988-2004, he worked in the Central Research Laboratory of Panasonic, and Toshiba Matsushita Display Technology Co., Ltd. He had wide variety of job experiences in company not only the R&D but also a mass production including a start up of the polycrystalline silicon (LTPS) TFT factory in Singapore. Since 2005, he joined Kochi University of Technology, and has been working on the research of metal oxide semiconductors for TFT. In 2006, he demonstrated a pioneering work of the metal oxide TFT which was the worlds’ first LCD driven by ZnO TFT at the conference of the Society for Information Display (SID’06) which was held at San Francisco, USA. He received the Distinguished Paper Award from the SID in 2006, the Outstanding Poster Award from the International Display Workshop (IDW) in 2006, 2013 and 2016, and the Niwa-Takayanagi Paper Award from the Institute of Image Information and Television Engineers (ITE, Japan) in 2011. He is a member of editorial board of Applied Physics Express (APEX) and Japanese Journal of Applied Physics (JJAP), Japan Society of Applied Physics, and a senior member of the IEEE.

 

Speech Title: Performance and reliability improvements in In–Ga–Zn–O TFTs by heterojunction channel

Abstract: An In–Ga–ZnO thin-film transistor (IGZO TFT) with a heterojunction channel was demonstrated to enhance field effect mobility (mFE) and positive bias stress stability (PBTS). For achieving a hetero-junction channel, a stacked film of high-In composition IGZO layer (IGZO-high-In) on typical compositions IGZO layer (IGZO-111) was employed to form the type-Ⅱ energy band diagram which possess a conduction band discontinuity (DEc) at a hetero interface. The mFE of the IGZO TFT increased to 23.7 cm2/Vs which is twice as high as a conventional IGZO TFT. Carrier transport mechanism in the heterojuction IGZO channel will be discussed based on the experimental and device simulation results.

 

 

Prof. Iftikhar Ahmad, Abbottabad University of Science and Technology, Pakistan

 

Mr. Gang Kang, vice president of LCoS-China company, China

Biography: Graduated from university in 1982, with 30 years of business operation and management experience, Mr. Keith Kang has successively served as the director or VP at China Southern Glass Holding, Shenzhen Branches of China Wangfujing Group and China Poly Group, Namhoi Investment HK, Vireal LCOS Technology, Huayue UAV Technology, responsible for the management of enterprise strategy, capital operation, HR, legal affairs and IP rights. As the team leader, he also shouldered and completed the planning, operation and management of the first magnetron vacuum sputtering coated glass production line, the first ultra-thin float glass plant and the first LCOS panel encapsulation line in mainland China.

 

 

Assoc. Prof. Suhaidi Bin Shafie, University Putra Malaysia, Malaysia

Suhaidi Shafie received the Bachelor of Engineering (Electrical and Electronics) from University of the Ryukyus, Japan in 2000. From 2000 to 2002, he was with ALPS Electric (M) Sdn. Bhd. He received the Master of Engineering (Electrical and Electronics) from Tokyo University of Agriculture and Technology, and the Doctor of Engineering (Nanovision) from Shizuoka University in 2005 and 2008, respectively. He is an Associate Professor in Universiti Putra Malaysia and the Head of Functional Devices Laboratory. Dr. Suhaidi is working in Mix Signal IC Design and Solar Energy research. His current projects include Ultra Low Power SAR ADC and High Efficiency Dye Sensitized Solar Cell. He is was the chapter chair of IEEE Circuits and Systems Malaysia Chapter and actively involves in IEEE CAS and IMS Malaysia Chapters activities.

 

Speech Title: Efficiency Enhancement of Dye Sensitized Solar Cell

Solar energy is one of the most efficient renewable energy sources that can be harvested at minimum cost. The growth of solar photovoltaic system implemented on rooftop or solar farm to generate power is significant and dominated by China, United States, Japan and India. Therefore the availability of cost effective solar cell is essential to support the solar PV demand. Meanwhile, in recent years, commercially available silicon and thin film solar cell dominate solar cell market due to its high efficiency and stability. However new type of solar cell such as organic solar cell, perovskite solar cell and dye-sensitized solar cells (DSSCs) have been intensively studied and developed. DSSCs have attracted considerable attention due to its advantages such as of low production cost, non-toxic material and simple fabrication process. However, more effort is needed to enhance the DSSC overall efficiency toward commercialization. DSSC highest efficiency reported by Sharp Corporation in 2016 was 11.9% using Black Dye as synthesizer and Cobalt electrolyte as hole transport material. In this session, DSSC efficiency enhancement utilizing AgNP/TiO2 plasmonic nanocomposite will be presented. The nanocomposite with different amount of AgNP were prepared by chemical reduction method using AgNO3 as precursor. The incorporation of AgNP onto the TiO2 has considerably improved the absorption in the visible region of solar spectrum due to the surface plasmon effect by silver nanoparticles. Then a method of incorporating carbon quantum dots (CQD) into TiO2 has also been studied in which the CQD can enhance the visible light absorption in DSSC. Both techniques shows significant improvement in light absorption which reflects to the DSSCs efficiency.

 

More information will be updated soon...